標(biāo)題: SL2N15 1 50V N-Channel Enhancement Mode MOSFET [打印本頁] 作者: 森利威爾電子 時(shí)間: 2021-6-11 14:25 標(biāo)題: SL2N15 1 50V N-Channel Enhancement Mode MOSFET Description
The SL2N15 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 150V,ID = 2A
RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and high frequency circuits
