1. Introduction
The purpose of this paper is to demonstrate a systematic
approach to design high-performance bootstrap gate drive
circuits for high-frequency, high-power, and high-efficiency
switching applications using a power MOSFET and IGBT.
It should be of interest to power electronics engineers at all
levels of experience. In the most of switching applications,
efficiency focuses on switching losses that are mainly depen-
dent on switching speed. Therefore, the switching character-
istics are very important in most of the high-power switching
applications presented in this paper. One of the most widely
used methods to supply power to the high-side gate drive cir-
cuitry of the high-voltage gate-drive IC is the bootstrap
power supply. This bootstrap power supply technique has the
advantage of being simple and low cost. However, it has
some limitations, on time of duty-cycle is limited by the
requirement to refresh the charge in the bootstrap capacitor
and serious problems occur when the negative voltage is pre-
sented at the source of the switching device. The most popu-
lar bootstrap circuit solutions are analyzed; including the
effects of parasitic elements, the bootstrap resistor, and
capacitor; on the charge of the floating supply application.
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